| PART |
Description |
Maker |
| K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16 |
64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TC58128FTI |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| MX23L12854 |
128M-BIT Low Voltage / Serial Mask ROM Memory with 50MHz SPI Bus Interface
|
Macronix International
|
| AT45DB1282 DOC2472 |
128M bit, 2.7-Volt Only Dual-Interface Flash. RapidS, Rapid8 with two 1056-Byte SRAM Buffers
From old datasheet system
|
Atmel
|
| TC58DVG02A1FI0 |
1 Gbit (128M x *8its) CMOS NAND EPROM
|
Toshiba
|
| TH58100FT |
1-GBIT (128M x 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
| HM5212165FLTD-75 HM5212805FLTD-75 HM5212165FLTD-A6 |
128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword × 16-bit × 4-bank/4-Mword × 8-bit × 4-bank PC/133, PC/100 SDRAM
128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword 隆驴 16-bit 隆驴 4-bank/4-Mword 隆驴 8-bit 隆驴 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory
|
| UPD23C128040BLGY-XXX-MJH UPD23C128080BLGY-XXX-MJH |
128M-bit (16M-wordx8-bit/8M-wordx16-bit) Mask ROM
|
NEC
|
